gi750 thru gi758 document number 88627 30-aug-05 vishay general semiconductor www.vishay.com 1 case style p600 high current axial plastic rectifier major ratings and characteristics i f(av) 6.0 a v rrm 50 v to 800 v i fsm 400 a v f 0.9 v, 0.95 v i r 5.0 a t j max. 150 c features low forward voltage drop low leakage current, i r less than 0.1a high forward current capability high forward surge capability solder dip 260 c, 40 seconds typical applications for use in general purpose rectification of power sup- plies, inverters, converters and freewheeling diodes application. (note: these devices are not q101 qualified. there- fore, the devices specified in this datasheet have not been designed for use in automotive or hi-rel appli- cations.) mechanical data case: p600, void-free molded epoxy body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solder- able per j-std-002b and jesd22-b102d polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gi750 gi751 gi752 gi754 gi756 gi758 unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 v maximum rms voltage v rms 35 70 140 280 420 560 v maximum dc blocking voltage v dc 50 100 200 400 600 800 v maximum non-repetitive peak reverse voltage v rsm 60 120 240 480 720 1200 v maximum average forward rectified current at t a = 60 c, p.c.b. mounting (fig. 1) t l = 60 c, 0.125" (3.18 mm) lead length (fig. 2) i f(av) 6.0 22 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 400 a operating junction and storage temperature range t j ,t stg - 50 to + 150 c
www.vishay.com 2 document number 88627 30-aug-05 gi750 thru gi758 vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, p.c.b. mounted with 1.1" x 1.1" (30 x 30 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbol gi750 gi751 gi752 gi754 gi756 gi758 unit maximum instantaneous forward voltage at: 6.0 a 100 a v f 0.90 1.25 0.95 1.30 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 100 c i r 5.0 1.0 a ma typical reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 2.5 s typical junction capacitance at 4.0 v, 1 mhz c j 150 pf parameter symbol gi750 gi751 gi752 gi754 gi756 gi758 unit typical thermal resistance (1) r ja r jl 20 4.0 c/w figure 1. maximum forward current derating curve 0 1.0 5.0 4.0 3.0 2.0 6.0 7.0 0 40 60 8 0 20 100 120 140 160 1 8 0 200 8 .0 a v erage for w ard rectified c u rrent (a) am b ient temperat u re ( c) 60 hz resisti v eor ind u cti v e load 1.1 x 1.1? (30 x 30 mm) copper pads figure 2. maximum forward current derating curve 0 4.0 8 .0 12 16 0 40 60 8 0 20 100 120 140 160 1 8 0 200 20 24 2 8 a v erage for w ard c u rrent (a) lead temperat u re ( c) 60 hz resisti v eor ind u cti v e load both leads attached to heat sinks w ith length as sho w n "l" l = 0.125" (3.1 8 mm) l = 0.25" (6.35mm) l = 0.375" (9.5 mm) l = 0.625" (15. 8 mm)
gi750 thru gi758 document number 88627 30-aug-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. maximum peak forward surge current figure 4. typical instantaneous forward characteristics peak for w ard s u rge c u rrent (a) nu m b er of cycles at 60 hz 1 10 100 50 100 600 n on-repetiti v e repetiti v e v rrm may b e applied b et w een each cycle of s u rge, the t j noted is t j prior to s u rge t j = 150 c t j = 25 c t j = 150 c t j = 25 c instantaneo u sfor w ard c u rrent ( a) 10 100 1.0 0.1 0.01 instantaneo u sfor w ard v oltage ( v ) 1.2 0. 8 0.6 1.4 1.6 1. 8 1.0 p u lse w idth = 300 s 1% d u ty cycle t j = 25 c figure 5. typical reve rse characteristics figure 6. typical trans ient thermal impedance instantaneo u sre v erse c u rrent ( a) 1.0 10 100 0.01 0.1 0 20 100 40 60 8 0 percent of rated peak re v erse v oltage (%) t j = 100 c t j = 125 c t j = 25 c transient thermal impedance (c/ w ) 10 100 0.1 1 t--p u lse d u ration (sec.) mo u nted on 0.20 x 0.27" (5 x 7 mm) copper pad areas 0.01 0.1 1 10 100 0.052 (1.32) 0.048 (1.22) 0.360 (9.1) 0.340 (8.6) dia. 1.0 (25.4) min. 0.360 (9.1) 0.340 (8.6) 1.0 (25.4) min. case style p600
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